[1]杜 星,王翠霞,余有灵,等.基于SiC MOSFET非线性电容CGD的Matlab电路仿真模型[J].机车电传动,2020,(01):49-52.[doi:10.13890/j.issn.1000-128x.2020.01.010]
 DU Xing,WANG Cuixia,YU Youling,et al.Matlab Circuit Simulation Model Based on SiC MOSFET Non-linear Capacitor CGD[J].Electric Drive for Locomotives,2020,(01):49-52.[doi:10.13890/j.issn.1000-128x.2020.01.010]
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基于SiC MOSFET非线性电容CGD的Matlab电路仿真模型()
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机车电传动[ISSN:1000-128X/CN:43-1125/U]

卷:
期数:
2020年01期
页码:
49-52
栏目:
功率半导体技术
出版日期:
2020-01-10

文章信息/Info

Title:
Matlab Circuit Simulation Model Based on SiC MOSFET Non-linear Capacitor CGD
文章编号:
1000-128X(2020)01-0049-04
作者:
杜 星1王翠霞1余有灵1吴江枫1刘 坤2李思思1
(1. 同济大学 电子与信息工程学院,上海 201804;2. 株洲中车时代半导体有限公司,湖南 株洲 412001)
Author(s):
DU Xing1 WANG Cuixia1 YU Youling1 WU Jiangfeng1 LIU Kun2 LI Sisi1
( 1. School of Electronics and Information Engineering, Tongji University, Shanghai 201804, China;2. Zhuzhou CRRC Times Semiconductor Co., Ltd., Zhuzhou, Hunan 412001, China )
关键词:
MatlabSimulinkSiC MOSFET非线性器件等效电路模型曲线拟合仿真模型建模
Keywords:
Matlab Simulink SiC MOSFET non-linear device equivalent circuit model curve fitting simulation model modeling
分类号:
TN304.2+4;TN386.1
DOI:
10.13890/j.issn.1000-128x.2020.01.010
文献标志码:
A
摘要:
基于Matlab和Simulink,提出了一种针对非线性器件的建模方法。以CREE公司的型号为C2M0080120D的SiC MOSFET为例,对其非线性电容CGD进行等效电路建模,采用曲线拟合的方法,使原本在Simulink中不易实现的功率器件的非线性电容特性得以表征,将该模型的特性与datasheet进行对比,模型精度达到97.44%,证明了该模型的准确性。
Abstract:
Based on Matlab and Simulink, a modeling method for non-linear devices was proposed. Taking the SiC MOSFET of CREE company C2M0080120D as an example, the equivalent circuit model of its nonlinear capacitance CGD was established. By using the curve fitting method, the non-linear capacitance characteristics of power devices which are not easy to realize in Simulink can be characterized. Compared with datasheet, the accuracy of the model was 97.44%. The accuracy of the model was validated.

参考文献/References:

[1] 吴宇鹰,江添洋,孔祥龙,等.碳化硅MOSFET行为建模方法[J].电力电子技术, 2017, 51(9): 31-33.

[2] 吴建强,李浩昱.非线性电容Pspice模型的建立[J].哈尔滨工业大学学报, 1999, 31(3): 44-46.
[3] 周宝霞,陈治明,王守觉.适合于PSPICE的一种精确的功率MOSFET等效电路[J].半导体学报, 1996, 17(4): 289-293.
[4] 徐艳明. SiC MOSFET PSpice建模及应用[D].北京:北京交通大学, 2017.
[5] 肖婵娟,张豪,梁文才,等.基于碳化硅MOSFET的器件建模与仿真[J].电力电子技术, 2018, 52(10): 122-124.
[6] CREE.C2M0080120D[EB/OL].(2015-10)[2019-10-31].https://www.wolfspeed.com/media/downloads/167/C2M0080120D.pdf.
7] 韩山,李文钧,林煊,等.基于MET模型的VDMOSFET建模[J].电子器件, 2015, 38(5): 986-992.
[8] 徐国林. 基于碳化硅MOSFET变温度参数模型的器件建模与仿真验证[D].北京:华北电力大学, 2016.

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备注/Memo

备注/Memo:
作者简介:杜 星(1995—),女,硕士研究生,研究方向为模拟/数字集成电路设计。
更新日期/Last Update: 2020-01-10