[1]曾 亮,王翠霞,吴江枫,等.4H-SiC MOSFET静态温度特性的仿真分析[J].机车电传动,2020,(01):45-48.[doi:10.13890/j.issn.1000-128x.2020.01.009]
 ZENG Liang,WANG Cuixia,WU Jiangfeng,et al.Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET[J].Electric Drive for Locomotives,2020,(01):45-48.[doi:10.13890/j.issn.1000-128x.2020.01.009]
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4H-SiC MOSFET静态温度特性的仿真分析()
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机车电传动[ISSN:1000-128X/CN:43-1125/U]

卷:
期数:
2020年01期
页码:
45-48
栏目:
功率半导体技术
出版日期:
2020-01-10

文章信息/Info

Title:
Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET
文章编号:
1000-128X(2020)01-0045-04
作者:
曾 亮1 王翠霞1吴江枫1余有灵1李诚瞻2杜 星1
(1. 同济大学 电子与信息工程学院,上海 201804;2.株洲中车时代半导体有限公司,湖南 株洲 412001)
Author(s):
ZENG Liang1 WANG Cuixia1 WU Jiangfeng1 YU Youling1 LI Chengzhan2 DU Xing1
( 1. School of Electronics and Information Engineering, Tongji University, Shanghai 201804, China;2. Zhuzhou CRRC Times Semiconductor Co., Ltd., Zhuzhou, Hunan 412001, China )
关键词:
4H-SiC MOSFET碳化硅静态特性温度特性器件仿真
Keywords:
4H-SiC MOSFET silicon carbide static characteristics temperature characteristics device simulation
分类号:
TN304.4.2+4;TN386.1
DOI:
10.13890/j.issn.1000-128x.2020.01.009
文献标志码:
A
摘要:
SiC材料具有较大的禁带宽度、高临界电场、高载流子饱和漂移速度和高热导率等优良特性,能广泛应用在高温、高压、大功率等领域。为探究温度对4H-SiC MOSFET静态特性的影响规律,以指导高温高压环境下4H-SiC MOSFET的设计与制造,文章基于Silvaco平台对高压4H-SiC MOSFET器件进行了仿真建模,获得了其不同温度下的击穿电压、转移特性和输出特性,探究了温度对其击穿电压、阈值电压、饱和漏电流、导通电阻的影响规律。文章最终得到了300 K时击穿电压为4 450 V的SiC MOSFET器件
Abstract:
SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other fields. In order to investigate the influence of temperature on the static characteristics of 4H-SiC MOSFET to guide the design and manufacture of 4H-SiC MOSFET in high temperature and high voltage environment, a high-voltage 4H-SiC MOSFET device was simulated and modeled based on the Silvaco platform, and the breakdown voltage, transfer characteristics and output characteristics at different temperatures were obtained. The influence of temperature on its breakdown voltage, threshold voltage, saturated current and on-resistance was investigated. The cell structure model of SiC MOSFET device with a breakdown voltage of 4 450 V at 300 K was obtained. It was verified that the static characteristics and parameters were affected by temperature. The influence law was consistent with the static characteristic theory of SiC MOSFET.

参考文献/References:

[1] 曹峻.碳化硅半导体技术和市场应用综述[J].集成电路应用, 2018, 35(8): 5-9.

[2] 陈治明,李守智. 宽禁带半导体电力电子器件及其应用[M]. 北京:机械工业出版社, 2009: 188-189.
[3] 周钦佩. 4H-SiC MOS器件栅氧化层时变击穿特性研究[D]. 北京:北方工业大学, 2018: 7-8.
[4] 许铭真, 谭长华. SiO2薄膜的电导与击穿机制的研究[C]//中国电子学会. 全国固体薄膜学会会议. 北海: 中国电子学会, 2000: 144-146.
[5] 张波, 邓小川, 张有润, 等. 宽禁带半导体SiC 功率器件发展现状及展望[J]. 中国电子科学研究院学报, 2009, 4(2): 111-118.
[6] 马青, 冉立, 胡博容,等.SiC MOSFET静态性能及参数温度依赖性的实验分析及与Si IGBT的对比[J].电源学报,2016,14(6): 67-79.

备注/Memo

备注/Memo:
作者简介:曾 亮(1994—),男,硕士研究生,研究方向为大功率电力电子器件。
更新日期/Last Update: 2020-01-10