[1]孙康康,陈燕平,忻兰苑,等.3 300 V全SiC MOSFET功率器件开关特性研究[J].机车电传动,2020,(01):34-37.[doi:10.13890/j.issn.1000-128x.2020.01.007]
 SUN Kangkang,CHEN Yanping,XIN Lanyuan,et al.Research on Switching Characteristics of 3 300 V Full SiCMOSFET Power Module[J].Electric Drive for Locomotives,2020,(01):34-37.[doi:10.13890/j.issn.1000-128x.2020.01.007]
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3 300 V全SiC MOSFET功率器件开关特性研究()
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机车电传动[ISSN:1000-128X/CN:43-1125/U]

卷:
期数:
2020年01期
页码:
34-37
栏目:
功率半导体技术
出版日期:
2020-01-10

文章信息/Info

Title:
Research on Switching Characteristics of 3 300 V Full SiCMOSFET Power Module
文章编号:
1000-128X(2020)01-0034-04
作者:
孙康康陈燕平忻兰苑王晓年余开庆胡长风
(中车株洲所电气技术与材料工程研究院,湖南 株洲 412001)
Author(s):
SUN Kangkang CHEN Yanping XIN Lanyuan WANG Xiaonian YU Kaiqing HU Changfeng
( CRRC ZIC Research Institute of Electrical Technology & Material Engineering, Zhuzhou, Hunan 412001, China )
关键词:
3 300 V全SiC MOSFET开关特性驱动电阻结温杂散电感
Keywords:
3 300 V full SiC MOSFET switching characteristics gate drive resistors junction temperature stray inductance
分类号:
TN304.2+4;TN386.1
DOI:
10.13890/j.issn.1000-128x.2020.01.007
文献标志码:
A
摘要:
为更好地发挥全 SiC 器件的开关速度快、损耗低等优势,研究了某款 3 300 V 全 SiC MOSFET 器件的开关特性。首先,通过理论分析阐述了开关变化过程,并给出了可量化的计算方法;其次,从驱动电阻、结温、回路杂散电感等方面探寻了开关特性变化的规律;最后,在样机上进行了验证。 结果表明,文章中所述优化开关特性的方法对全 SiC 逆变器的工程应用有一定的指导意义。
Abstract:
Depending on the advantages of SiC MOSFET with faster switching and lower on-state losses, the switching characteristics of a 3 300 V full SiC MOSFET device were studied to make better use of the device. Firstly, the switching processes of the SiC device were illustrated in theory, and the quantifiable method was provided; secondly, the effects of gate drive resistors, junction temperature and stray inductance on switching characteristics were investigated; finally, a prototype test was carried out. The results indicated that the switching characteristics optimizing method as discussed can provide application guidance to the full SiC invertors.

参考文献/References:

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备注/Memo

备注/Memo:
作者简介:孙康康(1990—),男,现从事功率半导体器件应用工作。
更新日期/Last Update: 2020-01-10