[1]刘国友,覃荣震,黄建伟,等.高功率密度IGBT模块的研发与特性分析[J].机车电传动,2014,(02):6-11.[doi:10.13890/j.issn.1000-128x.2014.02.030]
 LIU Guo-you,QIN Rong-zhen,HUANG Jian-wei,et al.Development and Characterization of High Power Density IGBT Module[J].Electric Drive for Locomotives,2014,(02):6-11.[doi:10.13890/j.issn.1000-128x.2014.02.030]
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高功率密度IGBT模块的研发与特性分析()
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机车电传动[ISSN:1000-128X/CN:43-1125/U]

卷:
期数:
2014年02期
页码:
6-11
栏目:
技术专题
出版日期:
2014-03-10

文章信息/Info

Title:
Development and Characterization of High Power Density IGBT Module
文章编号:
1000-128X(2014)02-0006-06
作者:
刘国友覃荣震黄建伟Ian Deviny罗海辉Rupert Stevens吴义伯
株洲南车时代电气股份有限公司
Author(s):
LIU Guo-you QIN Rong-zhen HUANG Jian-wei Ian Deviny LUO Hai-hui Rupert StevensWU Yi-bo
(Power Semiconductor R&D Center, Zhuzhou CSR Times Electric Co.,Ltd., Lincoln, LN6 9LF, United Kingdom)
关键词:
绝缘栅双极晶体管芯片模块高功率密度功耗散热特性分析轨道交通
Keywords:
IGBT chip set module high power density power consumption heat dissipation characterization rail transit
分类号:
TN32
DOI:
10.13890/j.issn.1000-128x.2014.02.030
文献标志码:
A
摘要:
基于现有标准DMOS设计技术,通过优化高压IGBT&FRD芯片及其模块结构,降低芯片功耗、模块寄生电感和模块热阻,改善模块散热,提高最高工作温度。研究开发了高功率密度1 500 A/3 300 V、1 200 A/4 500 V及750 A/6 500 V IGBT模块,满足轨道交通的应用要求。
Abstract:
Based on the standard DMOS technologies, the IGBT&FRD chip set and module structures were improved to realize lower

参考文献/References:

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备注/Memo

备注/Memo:
作者简介:刘国友(1966-),男,高级工程师(教授级),主要从事功率半导体技术研究、产品开发及其产业化工作。
更新日期/Last Update: 2014-03-10