[1]周帅,张小勇,饶沛南,等.大功率SiC-MOSFET 模块驱动技术研究[J].机车电传动,2018,(02):26-31.[doi:10.13890/j.issn.1000-128x.2018.02.006]
 ZHOU Shuai,ZHANG Xiaoyong,RAO Peinan,et al.Research on the Techniques of High Power SiC-MOSFET Driver[J].Electric Drive for Locomotives,2018,(02):26-31.[doi:10.13890/j.issn.1000-128x.2018.02.006]
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大功率SiC-MOSFET 模块驱动技术研究()
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机车电传动[ISSN:1000-128X/CN:43-1125/U]

卷:
期数:
2018年02期
页码:
26-31
栏目:
研究开发
出版日期:
2018-03-31

文章信息/Info

Title:
Research on the Techniques of High Power SiC-MOSFET Driver
文章编号:
1000-128X(2018)02-0026-06
作者:
周帅 12张小勇1饶沛南1张庆 1施洪亮1
(1. 株洲中车时代电气股份有限公司,湖南株洲 412001; 2. 变流技术国家工程研究中心,湖南株洲 412001)
Author(s):
ZHOU Shuai 12 ZHANG Xiaoyong1 RAO Peinan1 ZHANG Qing1 SHI Hongliang1
( 1.Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China; 2. National Engineering Research Center of Converters, Zhuzhou, Hunan 412001, China )
关键词:
SiC-MOSFET米勒效应桥臂串扰有源钳位过流检测
Keywords:
SiC-MOSFET Miller effect bridge-arm crosstalk active clampuing over-current detection
分类号:
TN304.2+4
DOI:
10.13890/j.issn.1000-128x.2018.02.006
文献标志码:
A
摘要:
为适应SiC-MOSFET 相比Si-IGBT 具有更快的开关速度、更低的工作损耗,同时开通阈值电压较低、短路耐量较弱等特点,研究了与其匹配的驱动技术。主要对漏极电压有源钳位、电路桥臂串扰抑制、过流检测等若干SiC-MOSFET 驱动技术进行研究,并基于三菱大功率SiC-MOSFET 模块开发配套驱动进行测试。结果表明,该驱动所采用的镜像电流检测法能快速有效地对SiC-MOSFET 模块进行过流检测与保护,同时漏极电压有源钳位能及时有效抑制大电流关断所产生的电压尖峰。
Abstract:
In order to adapt to the characteristics of SiC-MOSFET, such as faster switching speed, lower loss but lower threshold voltage and weaker short-circuit capacity compared to Si-IGBT, the key techniques of SiC-MOSFET driver was analyzed, including drain voltage active clamping, bridge-arm crosstalk suppression, and over-current detection etc, as well as the test aiming at the driver for Mitsubishi SiC-MOSFET module. The results showed that the mirror-current sensing method could give a good protection for SiCMOSFET, and the active clamping could reduce the high voltage surges across the high current turned-off.

参考文献/References:

[1]张斌锋,许津铭,钱强,等. SiC MOSFET 特性及其应用的关键技术分析[J]. 电源学报,2016,14(4):39-51.
[2]赵慧超,张青利,刘洪昌,等. SiC MOSFET 驱动技术研究[D]. 北京:北京交通大学,2015.
[3]Wrzecionko B, Bortis D, Biela J,et al. Novel AC-coupled gate driver for ultrafast switching of normally off SiC JFETs[J]. IEEE Transactions on Power Electronics,2012,27 (7):3452- 3463.
[4]钟志远,秦海鸿,袁源,等. 碳化硅桥臂电路串扰抑制方法 [J]. 电工电能新技术,2015,34(5):8-12.
[5] 李磊, 宁圃奇, 温旭辉, 等. 1200V 碳化硅MOSFET 与 SiIGBT 器件特性对比研究[J]. 电源学报,2016,14(4):32- 38.

备注/Memo

备注/Memo:
作者简介:周 帅(1985-),男,硕士,工程师,主要从事DC/DC 变换器系统设计工作。
更新日期/Last Update: 2018-03-10