[1]刘国友,罗海辉,李群锋,等.轨道交通用750 A/6 500 V 高功率密度IGBT 模块[J].机车电传动,2016,(06):21-26.[doi:10.13890/j.issn.1000-128x.2016.06.005]
 LIU Guoyou,LUO Haihui,LI Qunfeng,et al.750 A/6 500 V High Power Density IGBT Module for Rail Transit Application[J].Electric Drive for Locomotives,2016,(06):21-26.[doi:10.13890/j.issn.1000-128x.2016.06.005]
点击复制

轨道交通用750 A/6 500 V 高功率密度IGBT 模块()
分享到:

机车电传动[ISSN:1000-128X/CN:43-1125/U]

卷:
期数:
2016年06期
页码:
21-26
栏目:
研究开发
出版日期:
2016-11-10

文章信息/Info

Title:
750 A/6 500 V High Power Density IGBT Module for Rail Transit Application
文章编号:
1000-128X(2016)06-0021-06
作者:
刘国友1罗海辉1李群锋2黄建伟1覃荣震1
(1. 株洲中车时代电气股份有限公司新型功率半导体器件国家重点实验室,湖南株洲 412001;2. 中国铁路总公司,北京 100844)
Author(s):
LIU Guoyou1 LUO Haihui1 LI Qunfeng2 HUANG Jianwei1 QIN Rongzhen1
( 1. State Key Laboratory of Advanced Power Semiconductor Device, Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China; 2. China Railway Corporation, Beijing 100844, China )
关键词:
绝缘栅双极晶体管“U”形增强型双扩散金属氧化物半导体增强型受控缓冲层横向变掺杂集电极750 A/6 500 V IGBT 模块轨道交通
Keywords:
IGBT "U"-shape DMOS+ CPT+ VLDC 750 A/6 500 V IGBT module rail transit
分类号:
U264.3+7;TN303
DOI:
10.13890/j.issn.1000-128x.2016.06.005
文献标志码:
A
摘要:
通态损耗及开关损耗的降低是高压绝缘栅双极晶体管(IGBT)设计与制造的关键。基于“U”形增强型双扩散金属氧化物半导体(DMOS+)元胞结构、增强型受控缓冲层(CPT+)及横向变掺杂集电极(VLDC)技术、横向变掺杂(VLD)终端结构等关键技术,研发了具有低通态损耗的6 500 V 平面栅 IGBT 芯片及其配套快恢复二极管(FRD)芯片。将IGBT 及FRD 芯片封装成750 A/6 500 V IGBT 模块并对其进行测试、试验,其动、静态特性与安全工作区(SOA)性能优良,满足我国高速动车组、大功率机车等轨道交通牵引的应用要求。
Abstract:
Low loss is the key for high voltage Insulated Gate Bipolar Transistor (IGBT) design and manufacture. Based on "U"- shape enhanced double diffused metal oxide semiconductor(DMOS+) cell structure, enhanced controllable punch through(CPT+), variation of lateral doping of collector(VLDC) and variation of lateral doping(VLD) termination structure, low on state loss 6 500 V IGBT& fast recovery diode (FRD) chip-set and module(750 A rated current) were developed. The test results showed that the static and dynamic characteristics as well as safe operation area (SOA) performance were competitive with competitors’ products. The CRRC 750A/6500V IGBT module could satisfy the rail transit traction application requirements of China high-speed EMUs and high power locomotive, etc.

参考文献/References:

[1] 刘国友,覃荣震,Ian Deviny,等. 牵引用3 300 V IGBT/FRD 芯片组设计与开发[J]. 机车电传动,2013(2):5-8.
[2] 刘国友,覃荣震,黄建伟,等. 高功率密度IGBT 模块的研发与特性分析[J]. 机车电传动,2014(2):6-11.
[3]刘国友,黄建伟,覃荣震,等. 智能电网用高功率密度1 500 A/3 300 V IGBT 模块[J]. 中国电机工程学报,2016, 36(10): 2784-2792.
[4] JOHNSON C M. Power Electronics Packaging-Packaging basics and functions[C]. Germany: ECPE Power Electronics Packaging,2012:4-6 .
[5] William W Sheng, Ronald P Colino. Power Electronic Modules:Design and Manufacture[M]. American: CRC PRESS LLC,2005:5-8.
[6]王立乔,黄玉水,刘兆燊,等. 多电平变流器多载波PWM 技术的研究[J]. 浙江大学学报( 工学版),2005,7(39): 1025-1030.
[7] Liu Guoyou, Ding Rongjun, Luo Haihui. Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor[J]. Engineering, 2015, 1(3):361-366.
[8] Thomas Duetemeyer, Josef-Georg Bauer, Elmar Falck, et al. 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness[J]. PCIM,2008:1-6.
[9] Rahimo M, Kopta A, Linder S. Novel Enhanced-Planar IGBT Technology Rated up to 6.5 kV for Lower Losses and Higher SOA Capability[J]. ISPSP, 2006:1-4.
[10] Pfaffenlehner M, Biermann J, Scharffer C, et al. New 3300V Chip Generation with a Trench IGBT and an Optimized Field Stop Concept with a Smooth Switching Behavior[J]. ISPSP,2004: 107-110.
[11] Libor Pina, Jan Vobecky. Fast recovery high power p-i-n diode with heavily shorted cathode for enhaced ruggedness in the circuit with IGCTs[J]. ISPSD, 2016:303-306.
[12] Roth R, Schulze H, Schaffer C. Power Cu Metallization for future power device- process integration concept and reliability[J]. ISPSD, 2016:195-198.
[13] Nakamura K, Sadamatsu K, Oya D, et al. Wide Cell Pitch LPT (II)-CSTBTTM(III) technology rating up to 6500 V for low loss[J] ISPSP, 2010:387-390.

相似文献/References:

[1]刘国友,覃荣震,黄建伟,等.高功率密度IGBT模块的研发与特性分析[J].机车电传动,2014,(02):6.[doi:10.13890/j.issn.1000-128x.2014.02.030]
 LIU Guo-you,QIN Rong-zhen,HUANG Jian-wei,et al.Development and Characterization of High Power Density IGBT Module[J].Electric Drive for Locomotives,2014,(06):6.[doi:10.13890/j.issn.1000-128x.2014.02.030]
[2]丁荣军,刘国友.轨道交通用高压IGBT技术特点及其发展趋势[J].机车电传动,2014,(01):1.[doi:10.13890/j.issn.1000-128x.2014.01.002]
 DING Rong-jun,LIU Guo-you.Technical Features and Development Trend of High-voltageIGBT for Rail Transit Traction Application[J].Electric Drive for Locomotives,2014,(06):1.[doi:10.13890/j.issn.1000-128x.2014.01.002]
[3]刘国友,覃荣震,黄建伟,等.牵引级高压IGBT模块短路特性研究及其优化[J].机车电传动,2014,(01):7.[doi:10.13890/j.issn.1000-128x.2014.01.031]
 LIU Guo-you,QIN Rong-zhen,HUANG Jian-wei,et al.Research and Optimization of High-voltage IGBT Module Short CircuitCharacteristics for Traction Application[J].Electric Drive for Locomotives,2014,(06):7.[doi:10.13890/j.issn.1000-128x.2014.01.031]
[4]刘国友,覃荣震,Ian Deviny,等.牵引用3 300 V IGBT/FRD芯片组设计与开发[J].机车电传动,2013,(02):5.[doi:10.13890/j.issn.1000-128x.2013.02.002]
 LIU Guo-you,QIN Rong-zhen,Ian Deviny,et al.3 300 V IGBT / FRD Chipset Design and Development for Traction Application[J].Electric Drive for Locomotives,2013,(06):5.[doi:10.13890/j.issn.1000-128x.2013.02.002]

备注/Memo

备注/Memo:
作者简介:刘国友(1966-),男,教授级高级工程师,主要从事半导体功率器件技术研究、产品开发及产业化工作。
更新日期/Last Update: 2016-11-10